Influence of selenium growth condition on the photovoltaic conversion efficiency of Sb2Se3 as the solar cell absorption layer

Journal of Materials Science: Materials in Electronics - The influences of the selenium (Se) growth condition on the electronic level structure including deep defects and further on the...     

Importance of optical homogeneity for high-quality transparent ceramics

Two types of transparent Y₂O₃ ceramics without including large scattering sources such as residual pores, one with very high optical homogeneity (type A) and another one with slightly insufficient optical homogeneity (type B), are purposely prepared, and their optical properties are investigated and compared qualitatively and quantitatively. Type A ceramic exhibits transmittance characteristics with very low internal loss in the visible to infrared wavelength region, while type B ceramic is inferior in various optical performances especially in the short (visible) wavelength region. In type B ceramic, birefringence occurs due to optical inhomogeneity in the visible region, resulting in a decrease in the extinction ratio. Non-uniform refractive index distribution is also observed in the Schlieren image of type B ceramic, hence the laser beam quality through that material is degraded. This study proved the importance of optical homogeneity of transparent ceramics and clarified the problems in actual applications.     

Adaptive reversible data hiding for JPEG images with multiple two-dimensional histograms

Joint photographic experts group (JPEG) can provide good quality with small file size but also eliminate extensively the redundancies of images. Therefore, hiding data into JPEG images in terms of maintaining high visual quality at small file sizes has been a great challenge for researchers. In this paper, an adaptive reversible data hiding method for JPEG images containing multiple two-dimensional (2D) histograms is proposed. Adaptability is mainly reflected in three aspects. The first one is to preferentially select sharper histograms for data embedding after $K$ histograms are established by constructing the $k$th ($k\in \{1,2,\dots ,K\}$) histogram using the $k$th non-zero alternating current (AC) coefficient of all the quantized discrete cosine transform blocks. On the other hand, to fully exploit the strong correlation between coefficients of one histogram, the smoothness of each coefficient is estimated by a block smoothness estimator so that a sharply-distributed 2D-histogram is constructed by combining two coefficients with similar smoothness into a pair. The pair corresponding to low complexity is selected priorly for data embedding, leading to high embedding performance while maintaining low file size. Besides, we design multiple embedding strategies to adaptively select the embedding strategy for each 2D histogram. Experimental results demonstrate that the proposed method can achieve higher rate–distortion performance which maintaining lower file storage space, compared with previous studies.     

A viable approach to prepare 3C-SiC coatings by thermal MOCVD using commercial grade precursors

A series of 3 C-SiC coatings were prepared by organometallic chemical vapor deposition (MOCVD) using precursor solution containing a varying proportion of commercial-grade hexamethyldisiloxane (HMDSO) and n-hexane. The phase composition, bonding state, and microstructure of 3 C-SiC coatings were studied in detail by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The microstructure and mechanical properties of the optimal 3 C-SiC coating were characterized by scanning transmission electron microscopy (STEM) and nanoindentation, respectively. Our results revealed that the amount of undesired graphite phase can be significantly reduced in the 3 C-SiC coating by introducing hydrogen gas in the reaction chamber alongside increasing the ratio of HMDSO/n-hexane in the precursor mixture. The STEM results revealed that the optimal coating was predominantly composed of nano-crystalline 3 C-SiC grains alongside a small amount of amorphous graphite. The hardness and elastic modulus of the optimal coating were 38.19 GPa and 363.2 GPa, respectively.     

Fabrication and comprehensive structural and spectroscopic properties of Er:Y2O3 transparent ceramics

Transparent Er:Y₂O₃ ceramics with sub-micron grain size (<1 μm) were fabricated by using one-step vacuum sintering followed by hot isostatic pressing (HIPing) technique. The transmission of the undoped Y₂O₃ reaches 83%. The structural characteristics including the phonon energy were investigated through X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) analysis and scanning electron microscopy (SEM) measurement. The overall spectroscopic properties of transmission, fluorescence emission up to 3000 nm, lifetime, up-conversion luminescence, and refractive index were systematically studied for both 0.25 at% and 7.0 at% Er:Y₂O₃ ceramics with different thicknesses. The comparison of the spectra of the fluorescence emission and up-conversion luminescence under both 976 and 808 nm laser excitation was performed. The multiple high-energy-state transitional processes after the excited state absorption (ESA) processes involved in the up-conversion are discriminated between the multi-phonon non-radiative transitions and the radiative transitions according to the measured maximum phonon vibrational energy. The calculation was performed based on the Judd–Ofelt theory.     

High-performance Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics with the triple point composition

Ternary 0.552Pb(Ni_1/3Nb_2/3)O₃-xPbZrO₃-(0.448-x)PbTiO₃ (PNN-PZ-PT) ceramics near the triple point compositions were fabricated by an improved two-step sintering method. The triple point composition 0.552PNN-0.135PZ-0.313PT ceramic has outstanding piezoelectric performance with piezoelectric coefficient d₃₃ = 1200 pC/N. Its easy fabrication and low cost make this piezoelectric material an excellent candidate for high sensitivity sensors and ultrasonic transducers. The evolution of domain structures for ceramics with composition near the triple point provides deeper insight into the mechanism of ultrahigh piezoelectric properties of PNN-PZ-PT ceramics.     

High-Efficiency Organic Solar Cells Based on a Low-Cost Fully Non-Fused Electron Acceptor

A series of tetrathiophene-based fully non-fused ring acceptors (4T-1, 4T-2, 4T-3, and 4T-4), which can be paired with the star donor polymer PBDB-T to fabricate highly efficient organic solar cells are developed. Tailoring the size of lateral chains can tune the solubility and packing mode of acceptor molecules in neat and blend films. It is found that the incorporation of 2-ethylhexyl chains can effectively change the compatibility with the donor polymer PBDB-T, and an encouraging power conversion efficiency of 10.15% is accomplished by 4T-3-based organic solar cells. It also presents good compatibility with the other polymer donor and an even higher power conversion efficiency (PCE) of 12.04% is achieved based on D18:4T-3 blend, which is the champion PCE for the fully non-fused acceptors. Importantly, these inexpensive tetrathiophene fully non-fused ring acceptors provide cost-effective photovoltaic performance. The results demonstrate a high photovoltaic performance from synthetically inexpensive materials could be achieved by the rational design of non-fused ring acceptor molecules.     

Improving the fill factor of N2200-based all polymer solar cells by introducing EPPDI as a solid additive

A cheap and commercially available small molecule (namely EPPDI) is introduced to the active layer of N2200-based all polymer solar cells as a solid additive. EPPDI at the optimal ratio can improve the D-A nano-scale morphology and reduce trap density of the active layer by filling morphological spaces. As a result, the photovoltaic performance of the resulting devices based on PF2:N2200 are increased from 6.28% to 7.03% with significantly enhanced fill factor. This work demonstrates a facile approach for improving the performance of all polymer solar cells.     

Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge-Trap Layered Electronics

The human brain is often likened to an incredibly complex and intricate computer, rather than electrical devices, consisting of billions of neuronal cells connected by synapses. Different brain circuits are responsible for coordinating and performing specific functions. The reward pathway of the synaptic plasticity in the brain is strongly related to the features of both drug addiction and relief. In the current study, a synaptic device based on layered hafnium disulfide (HfS₂) is developed for the first time, to emulate the behavioral mechanisms of drug dosage modulation for neuroplasticity. A strong gate-dependent persistent photocurrent is observed, arising from the modulation of substrate-trapping events. By controlling the polarity of gate voltage, the basic functions of biological synapses are realized under a range of light spiking conditions. Furthermore, under the control of detrapping/trapping events at the HfS₂/SiO₂ interface, positive/negative correlations of the A_n/A₁ index, which significantly reflected the weight change of synaptic plasticity, are realized under the same stimulation conditions for the emulation of the drug-related addition/relief behaviors in the brain. The findings provide a new advance for mimicking human brain plasticity.     

Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First-Principles Insights

It is believed that promoting the fraction of ferroelectric orthorhombic phase (o-phase) through O-poor growth conditions can increase the spontaneous polarization of HfO₂ and (Hf,Zr)O₂ thin films. However, the first-principles calculations show that the growth may be limited by the easy formation of point defects in the orthorhombic and tetragonal phases of HfO₂, ZrO₂, and (Hf,Zr)O₂. Their dominant defects, O interstitial (O_i) under O-rich conditions and O vacancy (V_O) under O-poor condition, have low formation energies and quite high density (10¹⁶–10¹⁹ cm⁻³ for 800–1400 K growth temperature). Especially, O_i has negative formation energy in tetragonal HfO₂ under O-rich condition, causing non-stoichiometry and limiting the crystalline-seed formation during o-phase growth. High-density defects can cause disordering of dipole moments and increase leakage current, both diminishing the polarization. These results explain the experimental puzzle that the measured polarization is much lower than the ideal value even in O-poor thin films and highlight that controlling defects is as important as promoting the o-phase fraction for enhancing ferroelectricity. The O-intermediate condition (average of O-rich and O-poor conditions) and low growth temperature are proposed for fabricating HfO₂ and (Hf,Zr)O₂ with fewer defects, lower leakage current, and stronger ferroelectricity, which challenges the belief that O-poor condition is optimal.